Manufacturing method for semiconductor device
US9214354B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2014 |
| Grant date | Dec 15, 2015 |
| Priority date | — |
| Expiry date | Dec 16, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/661
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a manufacturing method of sequentially forming a gate electrode film of the MOSFET, forming a gate electrode film of the non-volatile memory FET, patterning the gate electrode of the non-volatile memory FET, and patterning the gate electrode of the MOSFET, in order to form the MOSFET and the non-volatile memory FET on the same semiconductor substrate. The value of the product of S/L and H/L is specified in a case that the line of the gate electrode of the non-volatile memory FET is set to L, the space thereof is set to S, and the height thereof is set to H so that the thickness of a resist film on the gate electrode of the non-volatile memory FET which is formed in advance is set to a thickness which is not lost by etching for forming the gate electrode of the MOSFET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.