Semiconductor device and method of fabricating the same
US9214381B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 28, 2014 |
| Grant date | Dec 15, 2015 |
| Priority date | — |
| Expiry date | Jan 28, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1063
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate, a conductive pattern, a side spacer, and an air gap. The substrate includes an interlayer insulating layer and a trench penetrating the interlayer insulating layer. The conductive pattern is disposed within the trench of the substrate. The side spacer is disposed within the trench. The side spacer covers an upper side surface of the conductive pattern. The air gap is disposed within the trench. The air gap is bounded by a sidewall of the trench, the side spacer, and a lower side surface of the conductive pattern. A level of a bottom surface of the conductive pattern is lower than a level of bottom surfaces of the side spacer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.