Integrated circuit devices including a through-silicon via structure and methods of fabricating the same
US9214411B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 6, 2014 |
| Grant date | Dec 15, 2015 |
| Priority date | — |
| Expiry date | Oct 6, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Integrated circuit (IC) devices are provided including: a first multi-layer wiring structure including a plurality of first wiring layers in a first region of a substrate at different levels and spaced apart from one another, and a plurality of first contact plugs between the plurality of first wiring layers and connected to the plurality of first wiring layers; a through-silicon via (TSV) landing pad including a first pad layer in a second region of the substrate at a same level as that of at least one first wiring layer from among the plurality of first wiring layers, and a second pad layer at a same level as that of at least one first contact plug from among the plurality of first contact plugs and contacts the first pad layer; a second multi-layer wiring structure on the TSV landing pad; and a TSV structure that passes through the substrate and is connected to the second multi-layer wiring structure through the TSV landing pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.