Methods of forming semiconductor devices including a stressor in a recess
US9214530B2 · kind B2 · utility
6Cited by
14References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2013 |
| Grant date | Dec 15, 2015 |
| Priority date | — |
| Expiry date | Sep 23, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a fast etching region comprising phosphorous in an active region and forming a first trench in the active region by recessing the fast etching region. The methods may also include forming a second trench in the active region by enlarging the first trench using a directional etch process and forming a stressor in the second trench. The second trench may include a notched portion of the active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.