Thin film transistor with two-dimensional doping array

US9214568B2 · kind B2 · utility

Assignee

• The Hong Kong University of Science and Technology

Inventors

• Hoi Sing Kwok · Kowloon, CN
• Meng Zhang · Nanhu, CN
• Shuming Chen · Kyoto, JP
• Wei Zhou · Nanhu, CN
• Man Wong · Hong Kong, CN

Key dates

• Filing date: Dec 12, 2013
• Grant date: Dec 15, 2015
• Expiry date: Jan 14, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6745

Abstract

A thin film transistor includes: a source region; a drain region; and a polycrystalline thin film active channel region connected to the source region and the drain region, the active channel region comprising grains and being doped with a two-dimensional pattern comprising a plurality of doped regions, the plurality of doped regions each comprising at least portions of a plurality of the grains and at least one grain boundary.