Compound semiconductor devices and methods for fabricating the same
US9214596B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Oct 26, 2011 |
| Grant date | Dec 15, 2015 |
| Priority date | — |
| Expiry date | Mar 23, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/734
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to the present invention, a method for manufacturing a compound semiconductor comprises: forming a graphene-derived material layer on either a first selected substrate or a first selected compound semiconductor layer; forming a second compound semiconductor layer of at least one layer on at least said graphene-derived material layer, and changing the graphene-derived material layer so as to separate said second compound semiconductor layer of at least one layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.