Patent · US Active

Doped piezoelectric resonator

US9214623B1 · kind B1 · utility

9Cited by

7References

18Claims

0Family size

Assignee

Analog Devices, Inc. · US

Inventor

Florian Thalmayr · Unterhaching, DE

Key dates

Filing date	Jan 18, 2013
Grant date	Dec 15, 2015
Priority date	—
Expiry date	Jan 18, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH10N30/802
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

Mechanical resonators including doped piezoelectric active layers are described. The piezoelectric active layer(s) of the mechanical resonator may be doped with a dopant type and concentration suitable to increase the electromechanical coupling coefficient of the active layer. The increase in electromechanical coupling coefficient may all for improved performance and smaller size mechanical resonators than feasible without using the doping.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.