Inverted top emitting device and method for producing same
US9214645B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2014 |
| Grant date | Dec 15, 2015 |
| Priority date | — |
| Expiry date | Sep 23, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2102/351
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
An inverted top emitting device includes an TIO/Ag/ITO substrate, a cathode layer, an electron transport layer, an emissive layer, a hole transport layer, and an anode layer. The TIO/Ag/ITO substrate, the cathode layer, the electron transport layer, the emissive layer, the hole transport layer, and the anode layer are stacked in sequence. The cathode layer is made of cesium carbonate. The inverted top emitting device and its producing method provided by the present invention change the current structure of ITO/Ag/ITO/HTL/EML/ETL/Mg:Ag of the device to ITO/Ag/ITO/Cs2CO3/ETL/EML/HTL/MoO3/Ag. This avoids use of low work function metals, such as magnesium. Thus, even if the encapsulation is not satisfactory, the device is less likely to be oxidized by water and oxygen, providing the device with a longer service life.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.