Enhanced porosification
US9217206B2 · kind B2 · utility
18Cited by
3References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2013 |
| Grant date | Dec 22, 2015 |
| Priority date | — |
| Expiry date | Mar 9, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Forming a porous layer on a silicon substrate. Forming the porous layer can include placing a first silicon substrate in a solution, where a first electrode is within a threshold distance to an edge of the silicon substrate. It can further include conducting a first current through the silicon substrate, where the first electrode can be positioned relative to the edge allowing for substantially uniform porosification along the edge of the first silicon substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.