Magnetoresistive random access memory cell and 3D memory cell array
US9218864B1 · kind B1 · utility
65Cited by
1References
20Claims
0Family size
Inventors
Key dates
| Filing date | Oct 4, 2014 |
| Grant date | Dec 22, 2015 |
| Priority date | — |
| Expiry date | Oct 4, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A novel three-terminal SOT-MRAM memory cell with a unique magnetic stabilization layer or structure is proposed. A complementary magnetic footprint of the data storage layer for the memory cell is able to be created within the magnetic stabilization layer or structure by the magnetic field from the storage layer to enhance the magnetic and thermal stability of the memory cell. Several designs for both perpendicular and in-plane SOT-MRAM memory cell have been invented. With proper wire connection and sensing arrangement, the proposed memory cell is capable of forming not only the 2D array but also 3D array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.