Reconfigurable multi-stack inductor
US9218903B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2013 |
| Grant date | Dec 22, 2015 |
| Priority date | — |
| Expiry date | Nov 11, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/4902
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A reconfigurable multi-stack inductor formed within a semiconductor structure may include a first inductor structure located within a first metal layer of the semiconductor structure, a first ground shielding structure located within the first metal layer that is electrically isolated from and circumferentially bounds the first inductor structure, and a second inductor structure located within a second metal layer of the semiconductor structure, whereby the second inductor structure is electrically coupled to the first inductor structure. A second ground shielding structure located within the second metal layer is electrically isolated from and circumferentially bounds the second inductor structure, whereby the first and second inductor generate a first inductance value based on the first ground shielding structure and second ground shielding structure being coupled to ground, and the first and second inductor generate a second inductance value based on the first ground shielding structure and second ground shielding structure electrically floating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.