Thin film transistor and manufacturing method thereof and display device
US9218957B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 19, 2012 |
| Grant date | Dec 22, 2015 |
| Priority date | — |
| Expiry date | Sep 19, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present invention provide a thin film transistor, a manufacturing method thereof and a display device. The method for manufacturing the thin film transistor, comprising the following steps: providing a substrate; forming a semiconductor layer on the substrate; forming a gate insulating layer; and forming a gate electrode, wherein the gate insulating layer comprises a first gate insulating layer, the first gate insulating layer being formed by oxidizing a portion of the semiconductor layer, and the unoxidized portion of the semiconductor layer forming an active layer, and wherein the gate electrode is formed in such a way that the gate insulating layer is sandwiched between the gate electrode and the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.