Low resistivity ohmic contact

US9218979B2 · kind B2 · utility

Assignee

• Phononic Devices, Inc. · US

Inventors

• Jason D. Reed · Chapel Hill, US
• Jaime A. Rumsey · Holly Springs, US
• Ronald R. Hess · Renton, US
• Arthur Prejs · Cary, US
• Ian Patrick Wellenius · Morrisville, US
• Allen L. Gray · Holly Springs, US

Key dates

• Filing date: Jan 16, 2015
• Grant date: Dec 22, 2015
• Expiry date: Jan 16, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N10/852
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Embodiments of a low resistivity ohmic contact are disclosed. In some embodiments, a method of fabricating a low resistivity ohmic contact includes providing a semiconductor material layer and intentionally roughening the semiconductor material layer to create a characteristic surface roughness. The method also includes providing an ohmic contact metal layer on a surface of the semiconductor material layer and providing a diffusion barrier metal layer on a surface of the ohmic contact metal layer opposite the semiconductor material layer. In this way, the adhesive force between the semiconductor material layer and the ohmic contact metal layer may be increased.