Method of manufacturing semiconductor storage device and semiconductor storage device
US9219066B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 19, 2013 |
| Grant date | Dec 22, 2015 |
| Priority date | — |
| Expiry date | Jan 1, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/35
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Method of manufacturing a semiconductor device includes forming, in a first region, a first trench through a second gate electrode film and an interelectrode insulating film, and a second trench partially extending into a sacrificial film in an isolation trench, filling the second trench with a first insulating film; forming a third gate electrode film above the second gate electrode film and into the first trench such that the third gate electrode film contacts the first gate electrode film; etching the third and the second gate electrode film, the interelectrode insulating film, and the first gate electrode film to form select gate electrodes in the first region and a group of memory-cell gate electrodes in the second region; removing the sacrificial film; and forming a second insulating film over the element regions and the isolation trench to define an unfilled gap in the isolation trench below the memory-cell gate electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.