Semiconductor device
US9219071B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 3, 2015 |
| Grant date | Dec 22, 2015 |
| Priority date | — |
| Expiry date | Mar 3, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/35
Abstract
A semiconductor device includes a substrate, a plurality of element regions that are partitioned in a line-and-space shape and extend in a first direction in the substrate, a plurality of selection gates that are formed on the substrate to extend in a second direction intersecting the first direction. In addition, the semiconductor device includes a contact region that includes a plurality of contact plugs which are provided between two selection gates adjacent to each other and are connected to the respective element regions in the substrate. Further, the contact plug includes an upper portion and a lower portion. The upper portion has a first width and is formed of a first conductive film and a second conductive film. The lower portion has a second width smaller than the first width and is formed of the first conductive film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.