Semiconductor device
US9219160B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2012 |
| Grant date | Dec 22, 2015 |
| Priority date | — |
| Expiry date | Sep 25, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
Abstract
A decrease in on-state current in a semiconductor device including an oxide semiconductor film is suppressed. A transistor including an oxide semiconductor film, an insulating film which includes oxygen and silicon, a gate electrode adjacent to the oxide semiconductor film, the oxide semiconductor film provided to be in contact with the insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the interface with the insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.