Wafer-level light emitting diode package and method of fabricating the same
US9219196B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 8, 2015 |
| Grant date | Dec 22, 2015 |
| Priority date | — |
| Expiry date | May 8, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/819
Abstract
Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.