Micro-light-emitting diode

US9219197B1 · kind B1 · utility

Assignee

• MIKRO MESA TECHNOLOGY CO., LTD. · WS

Inventors

• Li-Yi Chen · Tainan, TW
• Pei-Yu Chang · Tainan, TW
• Chih-Hui Chan · Tainan, TW
• Chun-Yi Chang · Fanshe, TW
• Shih-Chyn Lin · Tainan, TW
• Hsin-Wei Lee · Ji'an, TW

Key dates

• Filing date: May 21, 2015
• Grant date: Dec 22, 2015
• Expiry date: May 21, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/84

Abstract

A micro-light-emitting diode (micro-LED) includes a first type semiconductor layer, a second type semiconductor layer, a first edge isolation structure, a first electrode, and a second electrode. The second type semiconductor layer and the first edge isolation structure are joined with the first type semiconductor layer. The first electrode is electrically coupled with the first type semiconductor layer. At least a part of a vertical projection of an edge of the first type semiconductor layer on the first electrode overlaps with the first electrode. The first edge isolation structure is at least partially located on the part of the first type semiconductor layer. The second electrode is electrically coupled with the second type semiconductor layer.