Semiconductor device and a method of making a semiconductor device
US9219204B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 11, 2014 |
| Grant date | Dec 22, 2015 |
| Priority date | — |
| Expiry date | Apr 23, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/52
Abstract
The present invention provides an LED device capable of emitting electromagnetic radiation ranging from about 200 nm to 365 nm and a method. The device has a substrate member, the substrate member being selected from sapphire, silicon, quartz, gallium nitride, gallium aluminum nitride, or others and an active region overlying the substrate region. The active region comprises a light emitting spatial region comprising a p-n junction and characterized by a current crowding feature of electrical current provided in the active region. The device has an optical structure spatially disposed separate and apart the light emitting spatial region and is configured to facilitate light extraction from the active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.