Method of controlling a laser beam annealing apparatus to manufacture thin film transistor substrate
US9221122B2 · kind B2 · utility
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2References
20Claims
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Key dates
| Filing date | Jun 20, 2013 |
| Grant date | Dec 29, 2015 |
| Priority date | — |
| Expiry date | Oct 11, 2033 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB23K26/032
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method of controlling a laser beam annealing apparatus to manufacture a thin film transistor substrate, the method including: irradiating a laser beam emitted from a laser beam irradiator onto an amorphous silicon layer on a substrate supported by a substrate support; obtaining photographic data with respect to at least a part of the substrate by using a photographic unit; and adjusting a position of at least one of the substrate support or the laser beam irradiator by using a position adjuster based on the photographic data obtained by the photographic unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.