Nano-electro-mechanical based memory
US9224448B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 2, 2014 |
| Grant date | Dec 29, 2015 |
| Priority date | — |
| Expiry date | Dec 2, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C23/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory arrangement comprising a plurality of cells is disclosed. In one aspect, each cell comprises a memory element and a read selector in series. Further, the memory element is a nano-electro-mechanical switch comprising an anchor, a beam fixed to the anchor, a first and second control gate, for controlling the position of the beam, a first output node against which the beam can be positioned. The cell also comprises a read selector comprising a first selector terminal, a second selector terminal, the first selector terminal connected to the first output node. The first respectively second control gates of switches of a same word are connected together by a first respectively second write word line serving as control gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.