Write-assisted memory with enhanced speed
US9224453B2 · kind B2 · utility
10Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2013 |
| Grant date | Dec 29, 2015 |
| Priority date | — |
| Expiry date | Jul 19, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C5/148
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A write-assisted memory includes a pre-charge assist circuit that assists the pre-charge of the power supply voltage on a power supply lead for an accessed memory cell in a bit-line-multiplexed group of memory cells subsequent to a write-assist period by coupling charge from the power supply leads for the remaining non-accessed memory cells in the bit-line-multiplexed group of memory cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.