Parallel plate reactor for uniform thin film deposition with reduced tool foot-print
US9224581B2 · kind B2 · utility
9Cited by
8References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 9, 2010 |
| Grant date | Dec 29, 2015 |
| Priority date | — |
| Expiry date | Jul 9, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32091
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A capacitive-coupled parallel plate plasma enhanced chemical vapor deposition reactor includes a gas distribution unit that is integrated in an RF electrode and is formed with a gas outlet. The parallel plate reactor is configured so that layers with high thickness homogeneity and quality can be produced. The capacitively coupled parallel plate plasma enhanced vapor deposition reactor has gas distribution unit with a multiple-stage showerhead constructed in such a way that it provides an independent adjustment of gas distribution and gas emission profile of the gas distribution unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.