Noble gas bombardment to reduce scallops in bosch etching
US9224615B2 · kind B2 · utility
10Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2013 |
| Grant date | Dec 29, 2015 |
| Priority date | — |
| Expiry date | Sep 11, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of etching a trench in a substrate is provided. The method repeatedly alternates between using a fluorine-based plasma to etch a trench, which has trench sidewalls, into a selected region of the substrate; and using a fluorocarbon plasma to deposit a liner on the trench sidewalls. The liner, when formed and subsequently etched, has an exposed sidewall surface that includes scalloped recesses. The trench, which includes the scalloped recesses, is then bombarded with a molecular beam where the molecules are directed on an axis parallel to the trench sidewalls to reduce the scalloped recesses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.