Silicon carbide semiconductor device and method for manufacturing the same
US9224645B2 · kind B2 · utility
0Cited by
3References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 9, 2011 |
| Grant date | Dec 29, 2015 |
| Priority date | — |
| Expiry date | Sep 19, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/411
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon carbide semiconductor device includes: a silicon carbide layer, a reaction layer which is in contact with the silicon carbide layer, a conductive oxidation layer which is in contact with the reaction layer, and an electrode layer which is formed over the reaction layer with the conductive oxidation layer interposed therebetween. A thickness of the conductive oxidation layer falls within a range of 0.3 nm to 2.25 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.