Membrane-based sensor device with non-dielectric etch-stop layer around substrate recess
US9224658B2 · kind B2 · utility
2Cited by
14References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 22, 2014 |
| Grant date | Dec 29, 2015 |
| Priority date | — |
| Expiry date | Jan 22, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/14
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A sensing device has a semiconductor substrate with an opening and a membrane spanning the opening. A heater is arranged on the membrane. To reduce the thermal conductivity of the membrane, a recess is etched into the membrane from below.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.