Method for manufacturing a conducting contact on a conducting element
US9224708B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 24, 2014 |
| Grant date | Dec 29, 2015 |
| Priority date | — |
| Expiry date | Jul 24, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15788
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method for producing an interconnection pad on a conducting element comprising an upper face and a side wall; the method being executed from a substrate at least the upper face of which is insulating; the conducting element going through at least an insulating portion of the substrate, the method being characterized in that it comprises the sequence of the following steps: a step of embossing the conducting element, a step of forming, above the upper insulating face of the substrate, a stack of layers comprising at least one electrically conducting layer and one electrically resistive layer, a step of partially removing the electrically resistive layer, a step of electrolytic growth on the portion of the electrically conducting layer so as to form at least one interconnection pad on said conducting element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.