Method of manufacturing semiconductor device
US9224745B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 5, 2012 |
| Grant date | Dec 29, 2015 |
| Priority date | — |
| Expiry date | Nov 5, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
Abstract
A method of manufacturing a semiconductor device includes: forming a conductive film on a semiconductor substrate; patterning the conductive film in a memory region to form a first gate electrode; after forming the first gate electrode, forming a mask film above each of the conductive film in a logic region and the first gate electrode; removing the mask film in the logic region; forming a first resist film above the mask film left in the memory region and above the conductive film left in the logic region; and forming a second gate electrode in the logic region by etching the conductive film using the first resist film as a mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.