Back side illumination image sensor with low dark current
US9224775B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 30, 2014 |
| Grant date | Dec 29, 2015 |
| Priority date | — |
| Expiry date | Jul 30, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/805
Abstract
An integrated circuit includes a back side illuminated image sensor formed by a substrate supporting at least one pixel, an interconnect part situated above a front side of the substrate and an anti-reflective layer situated above a back side of the substrate. The anti-reflective layer may be formed of a silicon nitride layer. An additional layer is situated above the anti-reflective layer. The additional layer is formed of one of amorphous silicon nitride or hydrogenated amorphous silicon nitride, in which the ratio of the number of silicon atoms per cubic centimeter to the number of nitrogen atoms per cubic centimeter is greater than 0.7.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.