Silicon carbide semiconductor device
US9224816B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 21, 2015 |
| Grant date | Dec 29, 2015 |
| Priority date | — |
| Expiry date | Apr 21, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/441
Abstract
A silicon carbide semiconductor device includes a silicon carbide layer, an element region including a semiconductor element portion formed in the silicon carbide layer, a JTE region (first electric field relaxing region), an insulating film disposed on a first main surface and covering the JTE region, and a pad electrode electrically connected to the JTE region. The pad electrode includes an extension portion extending from an end of the JTE region close to the element region in a peripheral direction from the element region toward the JTE region, the extension portion being disposed on the insulating film. The extension portion overlies at least a portion of the JTE region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.