Semiconductor device and method for manufacturing the same
US9224818B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 14, 2015 |
| Grant date | Dec 29, 2015 |
| Priority date | — |
| Expiry date | Jan 14, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/514
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device of an embodiment includes a semiconductor layer formed of a III-V group nitride semiconductor, a first silicon nitride film formed on the semiconductor layer, a gate electrode formed on the first silicon nitride film, a source electrode and a drain electrode formed on the semiconductor layer such that the gate electrode is interposed between the source electrode and the drain electrode, and a second silicon nitride film formed between the source electrode and the gate electrode and between the drain electrode and the gate electrode and having an oxygen atom density lower than that of the first silicon nitride film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.