Oxide semiconductor sputtering target, method of manufacturing thin-film transistors using the same, and thin film transistor manufactured using the same
US9224820B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 29, 2013 |
| Grant date | Dec 29, 2015 |
| Priority date | — |
| Expiry date | Jun 10, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An oxide semiconductor sputtering target which is used for depositing a thin film having high electron mobility and high operational reliability, a method of manufacturing thin-film transistors (TFTs) using the same, and a TFT manufactured using the same. The oxide semiconductor sputtering target is used in a sputtering process for depositing an active layer on a TFT. The oxide semiconductor sputtering target is made of a material based on a composition including indium (In), tin (Sn), gallium (Ga) and oxygen (O). The method includes the step of depositing an active layer using the above-described oxide semiconductor sputtering target. The thin-film transistor may be used in a display device, such as a liquid crystal display (LCD) or an organic light-emitting display (OLED).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.