Thin film transistor and method for manufacturing same
US9224871B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2014 |
| Grant date | Dec 29, 2015 |
| Priority date | — |
| Expiry date | Aug 22, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
According to one embodiment, a thin film transistor includes a first insulating film, a gate electrode, a semiconductor layer, a gate insulator film, a second insulating film, a source electrode, a tunneling insulating portion, and a drain electrode. The semiconductor layer is provided between the gate electrode and the first insulating film, and includes an amorphous oxide. The gate insulator film is provided between the semiconductor layer and the gate electrode. The second insulating film is provided between the semiconductor layer and the first insulating film. The tunneling insulating portion is provided between the semiconductor layer and the source electrode, and between the semiconductor layer and the drain electrode, and between the first insulating film and the second insulating film. The tunneling insulating portion includes oxygen and at least one selected from aluminum and magnesium. A thickness of the tunneling insulating portion is 2 nanometers or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.