Patent · US Active

Photodetection device

US9224891B2 · kind B2 · utility

0Cited by

3References

12Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Daivid Fowler · Grenoble, FR
Roch Espiau De Lamaestre · Grenoble, FR

Key dates

Filing date	Jan 4, 2013
Grant date	Dec 29, 2015
Priority date	—
Expiry date	Jan 4, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH10F77/1248
WIPO fieldOptics
WIPO sectorInstruments

Abstract

The invention relates to a photodetector for infrared light radiation having a given wavelength (λ), including a stack of layers consisting of: a continuous layer (11) of a partially absorbent semiconductor material, which constitutes the photodetection area; a spacer layer (12) of a material that is transparent to said wavelength and has an index ne; and a structured metal mirror (13), the distance (g) between the top of said mirror and the semiconductor layer being less than (λ)/ne and the mirror surface having a profile corresponding to the periodic repetition, according to period (P), of a basic pattern defined by the alternating series of raised surfaces (131, 132) and slots (133, 134) having the widths (L1, L2) and (L3, L4), respectively, the widths (L1) to (L4) being such that none are equal to zero, and that the sum thereof is equal to P and at least L1≠L2 or L3≠L4.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.