Semiconductor light emitting device
US9224919B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 9, 2014 |
| Grant date | Dec 29, 2015 |
| Priority date | — |
| Expiry date | Sep 9, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/882
Abstract
According to one embodiment, the second insulating film is provided between the first interconnect portion and the second interconnect portion, and at an outer periphery of a side face of the semiconductor layer. The optical layer is provided on the first side and on the second insulating film at the outer periphery. The optical layer is transmissive with respect to light emitted from the light emitting layer. A plurality of protrusions and a plurality of recesses are provided at the first side. Peaks of the protrusions are positioned closer to the second side than an end on the second insulating film side of the optical layer at the outer periphery.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.