Memristive elements that exhibit minimal sneak path current
US9224949B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2011 |
| Grant date | Dec 29, 2015 |
| Priority date | — |
| Expiry date | Jun 6, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
Memristive elements are provided that include an active region disposed between a first electrode and a second electrode, the active region including two switching layers formed of a switching material capable of carrying a species of dopants and a conductive layer formed of a dopant source material. Memristive elements also are provided that include two active regions disposed between a first electrode and a second electrode, and a third electrode being disposed between and in electrical contact with both of the active regions. Each of the active regions include a switching layer formed of a switching material capable of carrying a species of dopants and a conductive layer formed of a dopant source material. Multilayer structures including the memristive elements also are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.