Apparatus with two-chamber structure for growing silicon carbide crystals

US9228275B2 · kind B2 · utility

Assignees

• RESEARCH AND DEVELOPMENT CENTER, SHANGHAI INSTITUTE OF CERAMICS · CN
• SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Zhizhan Chen · Shanghai, CN
• Erwei Shi · Shanghai, CN
• Chengfeng Yan · Shanghai, CN
• Bing Xiao · Beijing, CN

Key dates

• Filing date: Jun 22, 2010
• Grant date: Jan 5, 2016
• Expiry date: Apr 28, 2033

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C30B35/00
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

An apparatus with two-chamber structure for growing silicon carbide (SiC) crystals is disclosed. The apparatus comprises a sample feed chamber and a crystal growth chamber, both of which are separately connected with each other by a vacuum baffle valve and connected with a vacuum system. The crystal growth apparatus ensures that the insulation materials in the crystal growth chamber cannot contact with air, minimizes the adsorption of nitrogen and pollutants on the insulation materials and the growth chamber, improves purity of SiC crystals and achieves precise control of the impurities so that growth of high-quality SiC crystals such as conductive, doped semi-insulating or high-purity semi-insulating SiC crystals and the like is enabled.