Magnetoresistive sensor with SAF structure having crystalline layer and amorphous layer
US9230575B2 · kind B2 · utility
4Cited by
4References
20Claims
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Key dates
| Filing date | Dec 13, 2013 |
| Grant date | Jan 5, 2016 |
| Priority date | — |
| Expiry date | Dec 13, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1121
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Implementations disclosed herein provide for a magnetoresistive (MR) sensor including a synthetic antiferromagnetic (SAF) structure that is magnetically coupled to a side shield element. The SAF structure includes at least one magnetic amorphous layer that is an alloy of a ferromagnetic material and a refractory material. The amorphous magnetic layer may be in contact with a non-magnetic layer and antiferromagnetically coupled to a layer in contact with an opposite surface of the non-magnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.