Electrically gated three-terminal circuits and devices based on spin hall torque effects in magnetic nanostructures apparatus, methods and applications
US9230626B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2013 |
| Grant date | Jan 5, 2016 |
| Priority date | — |
| Expiry date | Aug 6, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
3-terminal magnetic circuits and devices based on the spin-transfer torque (STT) effect via a combination of injection of spin-polarized electrons or charged particles by using a charge current in a spin Hall effect metal layer coupled to a free magnetic layer and application of a gate voltage to the free magnetic layer to manipulate the magnetization of the free magnetic layer for various applications, including non-volatile memory functions, logic functions and others. The charge current is applied to the spin Hall effect metal layer via first and second electrical terminals and the gate voltage is applied between a third electrical terminal and either of the first and second electrical terminals. The spin Hall effect metal layer can be adjacent to the free magnetic layer or in direct contact with the free magnetic layer to allow a spin-polarized current generated via a spin Hall effect under the charge current to enter the free magnetic layer. The disclosed 3-terminal magnetic circuits can also be applied to signal oscillator circuits and other applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.