Variable resistance memory device and a variable resistance memory system including the same
US9230642B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 21, 2014 |
| Grant date | Jan 5, 2016 |
| Priority date | — |
| Expiry date | Apr 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A variable resistance memory system includes a variable resistance memory device including a memory cell array including first and second areas; and a memory controller configured to control the variable resistance memory device. The first area includes first variable resistance memory cells including a first variable resistance material layer and the second area includes second variable resistance memory cells including a second variable resistance material layer having a metallic doping concentration higher than a metallic doping concentration of the first variable resistance material layer. The first variable resistance memory cells are used as storage and the second variable resistance memory cells are used as a buffer memory.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.