Method of fabricating semiconductor device using photo key
US9230808B2 · kind B2 · utility
0Cited by
8References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 2, 2013 |
| Grant date | Jan 5, 2016 |
| Priority date | — |
| Expiry date | Nov 16, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device includes providing a substrate that is divided into a first region on which a pattern layer is formed and a second region on which a photo key is formed. A silicon layer is formed on the first region and second region of the substrate. The silicon layer is patterned to form a hole exposing a photo key portion of the second region on which the photo key is formed. A buried oxide layer is formed to fill the hole exposing the photo key portion. The silicon layer is patterned by using the photo key formed under the buried oxide layer to form a silicon pattern layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.