Patent · US Active

Method for manufacturing structure having air gap

US9230856B2 · kind B2 · utility

4Cited by
1References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 27, 2014
Grant dateJan 5, 2016
Priority date
Expiry dateJun 27, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method for manufacturing a structure having an air gap includes following steps. A plurality of patterns is formed in a pattern region of a substrate. A sacrificial layer is formed on the substrate, and a top surface of the sacrificial layer is lower than a top surface of the patterns to expose a plurality of upper portions of the patterns. A hard mask layer is formed to cover the sacrificial layer and the upper portions of the patterns. An etching-back process is performed to the hard mask layer to expose the sacrificial layer outside the pattern region, and the hard mask layer remaining inside the pattern region seals the opening between the upper portions of the patterns. The sacrificial layer is removed to form an air gap between the two adjacent patterns.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.