Method of producing semiconductor module and semiconductor module
US9230924B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2015 |
| Grant date | Jan 5, 2016 |
| Priority date | — |
| Expiry date | Jun 2, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In order to securely ground an exterior shield and reduce burden imposed on a dicing blade and the exterior shield, a method of producing a semiconductor module comprises a hole-forming step of forming a hole 30 extending from a top surface of a sealing resin layer 3 to a ground wiring 111 (112) provided at a collective substrate 100, a film-forming step of forming an electrically conductive film made of an electrically conductive material so as to cover at least the top surface of the sealing resin layer 3, an internal surface of the hole 20, and the ground wiring 111 (112), and a separation step of separating from each other a plurality of individual module sections which the individual module section comprises.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.