Semiconductor device and method of manufacturing the same
US9231101B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 5, 2014 |
| Grant date | Jan 5, 2016 |
| Priority date | — |
| Expiry date | Sep 5, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/159
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate, a body region, a body contact region and a cancelling region each of the first conductivity type, and a buried layer, an epitaxial layer and a source region each of the second conductivity type. A trench is provided in the epitaxial layer from a surface thereof. A gate insulating film is provided on an inner wall of the trench, and a gate electrode made of polycrystalline silicon is in contact with the gate insulating film and fills the trench. The cancelling region, which is provided below a bottom surface of the trench for cancelling a conductivity type of the buried layer, has a distribution center located below a boundary surface between the buried layer and the epitaxial layer. A trench bottom surface lower region of the first conductivity type is provided from the bottom surface of the trench continuously to the cancelling region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.