Semiconductor device
US9231111B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 6, 2014 |
| Grant date | Jan 5, 2016 |
| Priority date | — |
| Expiry date | Mar 10, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6757
Abstract
An object is to provide a semiconductor device that includes an oxide semiconductor and is suitable for a power device. An object is to provide a semiconductor device in which large current can flow. An object is to provide a highly reliable semiconductor device. A semiconductor device includes an oxide stack in which a first oxide layer, a first oxide semiconductor layer, a second oxide semiconductor layer, and a second oxide layer are stacked and has a structure in which a region that contains an element imparting conductivity and is provided in the first oxide semiconductor layer overlaps an electrode functioning as a source electrode and does not overlap an electrode functioning as a drain electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.