Light-emitting diode structure with electrode pads of similar surface roughness and method for manufacturing the same

US9231158B2 · kind B2 · utility

Assignee

• Epistar Corporation · TW

Inventors

• Cheng-Ta Kuo · Hsinchu, TW
• Kuo-Hui Yu · Tainan, TW
• Chao-Hsing Chen · Tainan, TW
• Tsun-Kai Ko · Tainan, TW
• Chi-Ming Huang · Shiliujia, TW
• Shih-Wei Yen · Danei, TW
• Chien-Kai Chung · Hsinchu, TW

Key dates

• Filing date: Aug 31, 2011
• Grant date: Jan 5, 2016
• Expiry date: Mar 6, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8312

Abstract

A light-emitting diode (LED) structure and a method for manufacturing the LED structure are disclosed for promoting the recognition rate of LED chips, wherein a roughness degree of the surface under a first electrode pad of a first conductivity type is made similar to that of the surface under a second electrode pad of a second conductivity type, so that the luster shown from the first electrode pad can be similar to that from the second electrode pad, thus resolving the poor recognition problem of wire-bonding machines caused by different lusters from the first and second electrode pads.