Semiconductor light emitting element

US9231160B1 · kind B1 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Kenjiro Uesugi · Kawasaki, JP
• Jumpei Tajima · Mitaka, JP
• Hiroshi Ono · Setagaya, JP
• Toshihide Ito · Tokyo, JP
• Shigeya Kimura · Yokohama, JP
• Shinya Nunoue · Ichikawa, JP

Key dates

• Filing date: Apr 23, 2015
• Grant date: Jan 5, 2016
• Expiry date: Apr 23, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/835

Abstract

A semiconductor light emitting element includes a metal layer, a first semiconductor layer of a first conductivity type, a light emitting layer, a second semiconductor layer of a second conductivity type, a first electrode, a second electrode, and an insulating layer. The first semiconductor layer is separated from the metal layer in a first direction. The first semiconductor layer includes a first region, a second region, and a third region. The light emitting layer has a first side surface intersecting a second direction. The second semiconductor layer has a second side surface intersecting the second direction. The first electrode is electrically connected to the first region and the metal layer. The second electrode includes a first portion, and a second portion being continuous with the first portion. The insulating layer includes a first insulating portion and a second insulating portion.