Semiconductor light emitting apparatus
US9231163B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 21, 2014 |
| Grant date | Jan 5, 2016 |
| Priority date | — |
| Expiry date | Apr 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
Abstract
A semiconductor light emitting apparatus includes semiconductor lamination of n-type layer, active layer, and p-type layer; recess penetrating the lamination from the p-type layer and exposing the n-type layer; n-side electrode formed on the n-type layer at the bottom of the recess and extending upward above the p-type layer; a p-side electrode formed on the p-type layer and having an opening surrounding the recess in plan view, the n-side electrode extending from inside to above the recess; and an insulating layer disposed between the p-side and the n-side electrodes on the p-type layer, the p-side electrode constituting a reflective electrode reflecting light incident from the active layer, the n-side electrode including a reflective electrode layer covering the opening in plan view and reflects light incident from the emission layer side, the reflective electrode layer having peripheral portion overlapping peripheral portion of the p-side electrode in plan view.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.