Thin film transistor and method of manufacturing the same
US9231222B2 · kind B2 · utility
3Cited by
2References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2012 |
| Grant date | Jan 5, 2016 |
| Priority date | — |
| Expiry date | Aug 14, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/464
Abstract
A thin film transistor (“TFT”) includes a gate electrode, a gate insulating layer, a source electrode, a drain electrode and a semiconductor layer. The gate insulating layer is disposed on the gate electrode. The source electrode is disposed on the gate insulating layer. The drain electrode is disposed on the gate insulating layer. The drain electrode is spaced apart from the source electrode. The semiconductor layer is disposed on the gate insulating layer. The semiconductor layer makes contact with a side surface of the source electrode and a side surface of the drain electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.