Acoustic bandgap structures for integration of MEMS resonators
US9232289B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 26, 2015 |
| Grant date | Jan 5, 2016 |
| Priority date | — |
| Expiry date | Jan 26, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04R2201/003
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Example acoustic bandgap devices provided that can be fabricated in a semiconductor fabrication tool based on design check rules. An example device includes a substrate lying in an x-y plane and defining an x-direction and a y-direction, an acoustic resonant cavity over the substrate, and a phononic crystal disposed over the acoustic resonant cavity by generating the phononic crystal as a plurality of unit cells disposed in a periodic arrangement. Each unit cell include: (a) at least one higher acoustic impedance structure having a longitudinal axis oriented in the y-direction and a thickness in the x-direction greater than or about equal to a minimal feature thickness of the semiconductor fabrication tool, and (b) at least one lower acoustic impedance material bordering at least a portion of the at least one higher acoustic impedance structure and forming at least a portion of a remainder of the respective unit cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.